Chin. Phys. B
中国物理B  2013, Vol. 22 Issue (6): 067702    DOI: 10.1088/1674-1056/22/6/067702
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
The charge storage characteristics of ZrO2 nanocrystallite-based charge trap nonvolatile memory
汤振杰a, 李荣b, 殷江c
a College of Physics and Electronic Engineering, Anyang Normal University, Anyang 455000, China;
b School of Mathematics and Statistics, Anyang Normal University, Anyang 455000, China;
c Department of Materials Science and Engineering, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
The charge storage characteristics of ZrO2 nanocrystallite-based charge trap nonvolatile memory
Tang Zhen-Jiea, Li Rongb, Yin Jiangc
a College of Physics and Electronic Engineering, Anyang Normal University, Anyang 455000, China;
b School of Mathematics and Statistics, Anyang Normal University, Anyang 455000, China;
c Department of Materials Science and Engineering, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China

Copyright © the Chinese Physical Society
Address:Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn