Chin. Phys. B
中国物理B  2013, Vol. 22 Issue (6): 067701    DOI: 10.1088/1674-1056/22/6/067701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation
孙家宝a b, 杨周伟a, 耿阳b, 卢红亮b, 吴汪然a, 叶向东a, 张卫b, 施毅a, 赵毅a c
a School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
b State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China;
c State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation
Sun Jia-Baoa b, Yang Zhou-Weia, Geng Yangb, Lu Hong-Liangb, Wu Wang-Rana, Ye Xiang-Donga, David Zhang Weib, Shi Yia, Zhao Yia c
a School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
b State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China;
c State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China

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