Chin. Phys. B
Chin. Phys. B  2013, Vol. 22 Issue (4): 047701    DOI: 10.1088/1674-1056/22/4/047701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect
郑直, 李威, 李平
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect
Zheng Zhi, Li Wei, Li Ping
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Copyright © the Chinese Physical Society
Address:Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn