Chin. Phys. B
Chin. Phys. B  2013, Vol. 22 Issue (4): 047102    DOI: 10.1088/1674-1056/22/4/047102
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors
曹芝芳a, 林兆军a, 吕元杰a, 栾崇彪a, 王占国b
a School of Physics, Shandong University, Jinan 250100, China;
b Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors
Cao Zhi-Fanga, Lin Zhao-Juna, Lü Yuan-Jiea, Luan Chong-Biaoa, Wang Zhan-Guob
a School of Physics, Shandong University, Jinan 250100, China;
b Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Copyright © the Chinese Physical Society
Address:Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn