Chin. Phys. B
中国物理B  2013, Vol. 22 Issue (3): 038501    DOI: 10.1088/1674-1056/22/3/038501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor
李妤晨, 张鹤鸣, 张玉明, 胡辉勇, 王斌, 娄永乐, 周春宇
Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor
Li Yu-Chen, Zhang He-Ming, Zhang Yu-Ming, Hu Hui-Yong, Wang Bin, Lou Yong-Le, Zhou Chun-Yu
Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

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