Chin. Phys. B
Chin. Phys. B  2013, Vol. 22 Issue (2): 027702    DOI: 10.1088/1674-1056/22/2/027702
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Influences of different oxidants on the characteristics of HfAlOx films deposited by atomic layer deposition
樊继斌, 刘红侠, 马飞, 卓青青, 郝跃
School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Influences of different oxidants on the characteristics of HfAlOx films deposited by atomic layer deposition
Fan Ji-Bin, Liu Hong-Xia, Ma Fei, Zhuo Qing-Qing, Hao Yue
School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

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