Chin. Phys. B
中国物理B  2012, Vol. 21 Issue (12): 126804    DOI: 10.1088/1674-1056/21/12/126804
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Influence of double AlN buffer layers on the qualities of GaN films prepared by metal–organic chemical vapour deposition
林志宇, 张进成, 周昊, 李小刚, 孟凡娜, 张琳霞, 艾姗, 许晟瑞, 赵一, 郝跃
Key Laboratory of Wide Band-Gap Semiconductor Technology, School ofMicroelectronics, Xidian University, Xi'an 710071, China
Influence of double AlN buffer layers on the qualities of GaN films prepared by metal–organic chemical vapour deposition
Lin Zhi-Yu, Zhang Jin-Cheng, Zhou Hao, Li Xiao-Gang, Meng Fan-Na, Zhang Lin-Xia, Ai Shan, Xu Sheng-Rui, Zhao Yi, Hao Yue
Key Laboratory of Wide Band-Gap Semiconductor Technology, School ofMicroelectronics, Xidian University, Xi'an 710071, China

Copyright © the Chinese Physical Society
Address:Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn