Chin. Phys. B
中国物理B  2012, Vol. 21 Issue (10): 108502    DOI: 10.1088/1674-1056/21/10/108502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates
乔明, 庄翔, 吴丽娟, 章文通, 温恒娟, 张波, 李肇基
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates
Qiao Ming, Zhuang Xiang, Wu Li-Juan, Zhang Wen-Tong, Wen Heng-Juan, Zhang Bo, Li Zhao-Ji
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

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