Chin. Phys. B
中国物理B  2012, Vol. 21 Issue (9): 098502    DOI: 10.1088/1674-1056/21/9/098502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Microwave damage susceptibility trend of bipolar transistor as a function of frequency
马振洋, 柴常春, 任兴荣, 杨银堂, 陈斌, 宋坤, 赵颖博
School of Microelectronics, Xidian University, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
Microwave damage susceptibility trend of bipolar transistor as a function of frequency
Ma Zhen-Yang, Chai Chang-Chun, Ren Xing-Rong, Yang Yin-Tang, Chen Bin, Song Kun, Zhao Ying-Bo
School of Microelectronics, Xidian University, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China

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