Chin. Phys. B
中国物理B  2012, Vol. 21 Issue (9): 097804    DOI: 10.1088/1674-1056/21/9/097804
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Relative enhancement of photoluminescence intensity of passivated silicon nanocrystals in silicon dioxide matrix
吴志永, 刘克新, 任晓堂
State Key Laboratory of Nuclear Physics and Technology, Institute of Heavy Ion Physics, Peking University, Beijing 100871, China
Relative enhancement of photoluminescence intensity of passivated silicon nanocrystals in silicon dioxide matrix
Wu Zhi-Yong, Liu Ke-Xin, Ren Xiao-Tang
State Key Laboratory of Nuclear Physics and Technology, Institute of Heavy Ion Physics, Peking University, Beijing 100871, China

Copyright © the Chinese Physical Society
Address:Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn