Chin. Phys. B
中国物理B  2012, Vol. 21 Issue (8): 088502    DOI: 10.1088/1674-1056/21/8/088502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Fabrication and characterization of 4H–SiC bipolar junction transistor with double base epilayer
张倩, 张玉明, 元磊, 张义门, 汤晓燕, 宋庆文
School of Microelectronics, Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices, Xidian University, Xi'an 710071, China
Fabrication and characterization of 4H–SiC bipolar junction transistor with double base epilayer
Zhang Qian, Zhang Yu-Ming, Yuan Lei, Zhang Yi-Men, Tang Xiao-Yan, Song Qing-Wen
School of Microelectronics, Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices, Xidian University, Xi'an 710071, China

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