Chin. Phys. B
中国物理B  2012, Vol. 21 Issue (8): 087305    DOI: 10.1088/1674-1056/21/8/087305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Monolithic integration of AlGaN/GaN metal–insulator field-effect transistor with ultra-low voltage-drop diode for self-protection
汪志刚, 陈万军, 张竞, 张波, 李肇基
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Monolithic integration of AlGaN/GaN metal–insulator field-effect transistor with ultra-low voltage-drop diode for self-protection
Wang Zhi-Gang, Chen Wan-Jun, Zhang Jing, Zhang Bo, Li Zhao-Ji
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

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