Chin. Phys. B
中国物理B  2012, Vol. 21 Issue (8): 087701    DOI: 10.1088/1674-1056/21/8/087701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Investigation of 4H–SiC metal–insulation–semiconductor structure with Al2O3/SiO2 stacked dielectric
汤晓燕, 宋庆文, 张玉明, 张义门, 贾仁需, 吕红亮, 王悦湖
School Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Investigation of 4H–SiC metal–insulation–semiconductor structure with Al2O3/SiO2 stacked dielectric
Tang Xiao-Yan, Song Qing-Wen, Zhang Yu-Ming, Zhang Yi-Men, Jia Ren-Xu, Lü Hong-Liang, Wang Yue-Hu
School Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

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