Chin. Phys. B
中国物理B  2012, Vol. 21 Issue (7): 078503    DOI: 10.1088/1674-1056/21/7/078503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
The effects of 60Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors
陈超, 田本朗, 刘兴钊, 戴丽萍, 邓新武, 陈远富
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
The effects of 60Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors
Chen Chao, Tian Ben-Lang, Liu Xing-Zhao, Dai Li-Ping, Deng Xin-Wu, Chen Yuan-Fu
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

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