Chin. Phys. B
中国物理B  2012, Vol. 21 Issue (7): 078502    DOI: 10.1088/1674-1056/21/7/078502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS
胡夏融, 张波, 罗小蓉, 王元刚, 雷天飞, 李肇基
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS
Hu Xia-Rong, Zhang Bo, Luo Xiao-Rong, Wang Yuan-Gang, Lei Tian-Fei, Li Zhao-Ji
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Copyright © the Chinese Physical Society
Address:Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn