Chin. Phys. B
中国物理B  2012, Vol. 21 Issue (7): 077304    DOI: 10.1088/1674-1056/21/7/077304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique
杨丽媛a, 薛晓咏a, 张凯a, 郑雪峰a, 马晓华a b, 郝跃a
a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Technical Physics, Xidian University, Xi'an 710071, China
Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique
Yang Li-Yuana, Xue Xiao-Yonga, Zhang Kaia, Zheng Xue-Fenga, Ma Xiao-Huaa b, Hao Yuea
a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Technical Physics, Xidian University, Xi'an 710071, China

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