Chin. Phys. B
中国物理B  2012, Vol. 21 Issue (7): 077103    DOI: 10.1088/1674-1056/21/7/077103
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer
张伟, 薛军帅, 周晓伟, 张月, 刘子阳, 张进成, 郝跃
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer
Zhang Wei, Xue Jun-Shuai, Zhou Xiao-Wei, Zhang Yue, Liu Zi-Yang, Zhang Jin-Cheng, Hao Yue
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

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