Chin. Phys. B
中国物理B  2012, Vol. 21 Issue (6): 068506    DOI: 10.1088/1674-1056/21/6/068506
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers
仵乐娟a, 李述体a, 刘超a, 王海龙a, 卢太平a, 张康a, 肖国伟b, 周玉刚b, 郑树文a, 尹以安a, 杨孝东a
a. Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
b. APT Electronics Ltd, Nansha District, Guangzhou 511458, China
Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers
Wu Le-Juana, Li Shu-Tia, Liu Chaoa, Wang Hai-Longa, Lu Tai-Pinga, Zhang Kanga, Xiao Guo-Weib, Zhou Yu-Gangb, Zheng Shu-Wena, Yin Yi-Ana, Yang Xiao-Donga
a. Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
b. APT Electronics Ltd, Nansha District, Guangzhou 511458, China

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