Chin. Phys. B
中国物理B  2012, Vol. 21 Issue (6): 068502    DOI: 10.1088/1674-1056/21/6/068502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS
汪涛a, 郭清a, 刘艳b, Yun Janggnc
a. College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China;
b. Second Affiliated Hospital, College of Medicine, Zhejiang University, Hangzhou 310007, China;
c. Department of Electronic Engineering, Chungnam National University, Gung-Dong, Daejeon, Korea
Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS
Wang Taoa, Guo Qinga, Liu Yanb, Yun Janggnc
a. College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China;
b. Second Affiliated Hospital, College of Medicine, Zhejiang University, Hangzhou 310007, China;
c. Department of Electronic Engineering, Chungnam National University, Gung-Dong, Daejeon, Korea

Copyright © the Chinese Physical Society
Address:Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn