Chin. Phys. B
中国物理B  2012, Vol. 21 Issue (6): 067503    DOI: 10.1088/1674-1056/21/6/067503
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Defects mediated ferromagnetism in a V-doped 6H–SiC single crystal
卓世异a b, 刘学超a, 熊泽a b, 闫文盛c, 忻隽a, 杨建华a, 施尔畏a
a. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;
b. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;
c. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
Defects mediated ferromagnetism in a V-doped 6H–SiC single crystal
Zhuo Shi-Yia b, Liu Xue-Chaoa, Xiong Zea b, Yan Wen-Shengc, Xin Juna, Yang Jian-Huaa, Shi Er-Weia
a. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;
b. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;
c. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China

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