Chin. Phys. B
中国物理B  2012, Vol. 21 Issue (6): 067304    DOI: 10.1088/1674-1056/21/6/067304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Far-infrared electroluminescence characteristics of an Si-based photodiode under a forward DC bias current
肖文波a, 何兴道a, 张志敏a, 高益庆a, 刘江涛b
a. Key Laboratory of Nondestructive Test (Ministry of Education),Nanchang Hangkong University, Nanchang 330063, China;
b. Department of Physics, Nanchang University, Nanchang 330031, China
Far-infrared electroluminescence characteristics of an Si-based photodiode under a forward DC bias current
Xiao Wen-Boa, He Xing-Daoa, Zhang Zhi-Mina, Gao Yi-Qinga, Liu Jiang-Taob
a. Key Laboratory of Nondestructive Test (Ministry of Education),Nanchang Hangkong University, Nanchang 330063, China;
b. Department of Physics, Nanchang University, Nanchang 330031, China

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