Chin. Phys. B
中国物理B  2012, Vol. 21 Issue (5): 057201    DOI: 10.1088/1674-1056/21/5/057201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer
段宝兴1 2,杨银堂1 2
1. School of Microelectronics, Xidian University, Xi'an 710071, China;
2. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices of Ministry of Education, Xi'an 710071, China
Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer
Duan Bao-Xinga b,Yang Yin-Tanga b
1. School of Microelectronics, Xidian University, Xi'an 710071, China;
2. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices of Ministry of Education, Xi'an 710071, China

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