Chin. Phys. B
中国物理B  2012, Vol. 21 Issue (2): 027304    DOI: 10.1088/1674-1056/21/2/027304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
姜向伟,李树深
Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs
Jiang Xiang-Wei,Li Shu-Shen
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China