Chin. Phys. B
中国物理B  2011, Vol. 20 Issue (7): 077303    DOI: 10.1088/1674-1056/20/7/077303
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Identification and elimination of inductively coupled plasma-induced defects in AlxGa1 - xN/GaN heterostructures
刘新宇1, 魏珂1, 黄俊1, 林芳2, 沈波2, 卢励吾2, 许福军2, 王彦2, 马楠2
(1)Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (2)State Key Laboratory of Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China%}
Identification and elimination of inductively coupled plasma-induced defects in AlxGa1 - xN/GaN heterostructures
Liu Xin-Yua, Wei Kea, Huang Juna, Lin Fangb, Shen Bob, Lu Li-Wub, Xu Fu-Junb, Wang Yanb, Ma Nanb
a Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; b State Key Laboratory of Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China%}

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