Chin. Phys. B
中国物理B  2011, Vol. 20 Issue (4): 044209    DOI: 10.1088/1674-1056/20/4/044209
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Influence of varied doping structure on photoemissive property of photocathode
张益军1, 常本康1, 熊雅娟1, 牛军2
(1)School of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China; (2)School of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;Department of Electron and Electric Engineering, Nanyang Institute of Technology, Nanyang 473004, China
Influence of varied doping structure on photoemissive property of photocathode
Zhang Yi-Juna, Chang Ben-Kanga, Xiong Ya-Juana, Niu Junb
a School of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China; b School of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;Department of Electron and Electric Engineering, Nanyang Institute of Technology, Nanyang 473004, China

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