Chin. Phys. B
中国物理B  2011, Vol. 20 Issue (3): 037902    DOI: 10.1088/1674-1056/20/3/037902
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Photoemission of graded-doping GaN photocathode
常本康1, 王晓晖1, 李飙1, 杜玉杰1, 张俊举1, 付小倩2
(1)Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China; (2)Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;School of Information Science and Engineering, University of Jinan, Jinan 250022, China
Photoemission of graded-doping GaN photocathode
Chang Ben-Kanga, Wang Xiao-Huia, Li Biaoa, Du Yu-Jiea, Zhang Jun-Jua, Fu Xiao-Qianb
a Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China; b Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;School of Information Science and Engineering, University of Jinan, Jinan 250022, China

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