Chin. Phys. B
中国物理B  2011, Vol. 20 Issue (11): 118401    DOI: 10.1088/1674-1056/20/11/118401
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode
黄健华, 吕红亮, 张玉明, 张义门, 汤晓燕, 陈丰平, 宋庆文
School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode
Huang Jian-Hua, Lü Hong-Liang, Zhang Yu-Ming, Zhang Yi-Men, Tang Xiao-Yan, Chen Feng-Ping, Song Qing-Wen
School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

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