Chin. Phys. B
中国物理B  2011, Vol. 20 Issue (11): 117302    DOI: 10.1088/1674-1056/20/11/117302
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
High temperature characteristics of AlGaN/GaN high electron mobility transistors
杨丽媛1, 郝跃1, 张进成1, 张凯1, 马晓华2, 潘才渊3, 马骥刚3, 马平3
(1)Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; (2)Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; School of Technical Physics, Xidian University, Xi'an 710071, China; (3)School of Technical Physics, Xidian University, Xi'an 710071, China
High temperature characteristics of AlGaN/GaN high electron mobility transistors
Yang Li-Yuana, Hao Yuea, Zhang Jin-Chenga, Zhang Kaia, Ma Xiao-Huab, Pan Cai-Yuanc, Ma Ji-Gangc, Ma Pingc
a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; School of Technical Physics, Xidian University, Xi'an 710071, China; c School of Technical Physics, Xidian University, Xi'an 710071, China

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