Chin. Phys. B
中国物理B  2011, Vol. 20 Issue (1): 017304    DOI: 10.1088/1674-1056/20/1/017304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer
邓小川, 张波, 张有润, 王易, 李肇基
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer
Deng Xiao-Chuan, Zhang Bo, Zhang You-Run, Wang Yi, Li Zhao-Ji
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

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