Chin. Phys. B
中国物理B  2010, Vol. 19 Issue (8): 087202    DOI: 10.1088/1674-1056/19/8/087202
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region
宋庆文, 张玉明, 张义门, 张倩, 吕红亮
School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region
Song Qing-Wen, Zhang Yu-Ming, Zhang Yi-Men, Zhang Qian, Lü Hong-Liang
School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

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