Chin. Phys. B
中国物理B  2010, Vol. 19 Issue (7): 077306    DOI: 10.1088/1674-1056/19/7/077306
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer
Florin Udrea1, 王元刚2, 邓浩2, 罗小蓉3
(1)Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, UK; (2)State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; (3)State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, UK
A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer
Florin Udreaa, Wang Yuan-Gangb, Deng Haob, Luo Xiao-Rongc
a Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, UK; b State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; c State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, UK

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