Chin. Phys. B
中国物理B  2010, Vol. 19 Issue (5): 057802    DOI: 10.1088/1674-1056/19/5/057802
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
魏龙1, 郝小鹏2, 赵德刚3, 张爽3, 刘文宝3, 江德生3, 朱建军3, 刘宗顺3, 王辉3, 张书明3, 杨辉3
(1)Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, China; (2)National Institute of Metrology, Beijing 100013, China; (3)State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
Wei Longa, Hao Xiao-Pengb, Zhao De-Gangc, Zhang Shuangc, Liu Wen-Baoc, Jiang De-Shengc, Zhu Jian-Junc, Liu Zong-Shunc, Wang Huic, Zhang Shu-Mingc, Yang Huic
a Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, China; b National Institute of Metrology, Beijing 100013, China; c State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Copyright © the Chinese Physical Society
Address:Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn