Chin. Phys. B
中国物理B  2010, Vol. 19 Issue (5): 057303    DOI: 10.1088/1674-1056/19/5/057303
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures
刘红侠, 吴笑峰, 胡仕刚, 石立春
School of Microelectronics, Xidian University, Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education, Xi'an 710071, China
Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures
Liu Hong-Xia, Wu Xiao-Feng, Hu Shi-Gang, Shi Li-Chun
School of Microelectronics, Xidian University, Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education, Xi'an 710071, China

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