Chin. Phys. B
中国物理B  2010, Vol. 19 Issue (4): 047310    DOI: 10.1088/1674-1056/19/4/047310
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Pressure effect study on the IV property of the GaAs-based resonant tunnelling structure by photoluminescence measurement
王楷群1, 菅傲群1, 张斌珍1, 李秋柱2, 刘鑫2
(1)Key Laboratory of Instrumentation Science and Dynamic Measurement (North University of China), Ministry of Education, Taiyuan {\rm 030051, China; (2)National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051, China
Pressure effect study on the IV property of the GaAs-based resonant tunnelling structure by photoluminescence measurement
Wang Kai-Quna, Jian Ao-Quna, Zhang Bin-Zhena, Li Qiu-Zhub, Liu Xinb
a Key Laboratory of Instrumentation Science and Dynamic Measurement (North University of China), Ministry of Education, Taiyuan {\rm 030051, China; b National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051, China

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