Chin. Phys. B
中国物理B  2010, Vol. 19 Issue (4): 047201    DOI: 10.1088/1674-1056/19/4/047201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension
宋庆文, 张玉明, 张义门, 张倩, 郭辉, 李志云, 王中旭
School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension
Song Qing-Wen, Zhang Yu-Ming, Zhang Yi-Men, Zhang Qian, Guo Hui, Li Zhi-Yun, Wang Zhong-Xu
School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

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