Chin. Phys. B
中国物理B  2010, Vol. 19 Issue (12): 127801    DOI: 10.1088/1674-1056/19/12/127801
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs
胡卫国1, 三宅秀人1, 平松和政1, 黎大兵2, 宋航2
(1)Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan; (2)Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs
Hu Wei-Guoa, Miyake Hidetoa, Hiramatsu Kazumasaa, Li Da-Bingb, Song Hangb
a Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan; b Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

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