Chin. Phys. B
中国物理B  2010, Vol. 19 Issue (10): 107304    DOI: 10.1088/1674-1056/19/10/107304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties
蒲红斌1, 曹琳1, 任杰1, 南雅公2
(1)Department of Electric Engineering, Faculty of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China; (2)Department of Electric Engineering, Faculty of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China; Department of Physics and Electronics, Hexi University, Zhangye 734000, Gansu Province, China
Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties
Pu Hong-Bina, Cao Lina, Ren Jiea, Nan Ya-Gongb
a Department of Electric Engineering, Faculty of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China; b Department of Electric Engineering, Faculty of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China; Department of Physics and Electronics, Hexi University, Zhangye 734000, Gansu Province, China

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