Chin. Phys. B
中国物理B  2010, Vol. 19 Issue (1): 017203    DOI: 10.1088/1674-1056/19/1/017203
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Characterization of ion-implanted 4H-SiC Schottky barrier diodes
张岩1, 王守国2, 张义门3, 张玉明3
(1)Department of Electronic and Information Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen 518055, China; (2)Department of Electronic and Information Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen 518055, China;School of Information Science and Technology, Northwest University, Xi'an 710127, China; (3)School of Microelectronics, Xidian University, Xi'an 710071, China
Characterization of ion-implanted 4H-SiC Schottky barrier diodes
Zhang Yana, Wang Shou-Guob, Zhang Yi-Menc, Zhang Yu-Mingc
a Department of Electronic and Information Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen 518055, China; b Department of Electronic and Information Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen 518055, China;School of Information Science and Technology, Northwest University, Xi'an 710127, China; c School of Microelectronics, Xidian University, Xi'an 710071, China

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