Chin. Phys. B
中国物理B  2009, Vol. 18 Issue (9): 03975    DOI: 10.1088/1674-1056/18/9/059
7000 CONDENSED MATTER:ELECTRONIC STRUCTURE,ELEC TRICAL,MAGNETIC,AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Intra-acceptor hole relaxation in Be δ-doped GaAs/AlAs multiple quantum wells
郑卫民1, 宋迎新1, 刘静1, 初宁宁1, 李素梅2
(1)School of Space Science and Physics, Shandong University at Weihai, Weihai 264209, China; (2)School of Space Science and Physics, Shandong University at Weihai, Weihai 264209, China;School of Information Engineering, Shandong University at Weihai, Weihai 264209, China
Intra-acceptor hole relaxation in Be δ-doped GaAs/AlAs multiple quantum wells
Zheng Wei-Mina, Song Ying-Xina, Liu Jinga, Chu Ning-Ninga, Li Su-Meib
a School of Space Science and Physics, Shandong University at Weihai, Weihai 264209, China; b School of Space Science and Physics, Shandong University at Weihai, Weihai 264209, China;School of Information Engineering, Shandong University at Weihai, Weihai 264209, China

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