Chin. Phys. B
中国物理B  2009, Vol. 18 Issue (12): 5474    DOI: 10.1088/1674-1056/18/12/057
7000 CONDENSED MATTER:ELECTRONIC STRUCTURE,ELEC TRICAL,MAGNETIC,AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Analytical model for reverse characteristics of 4H--SiC merged PN--Schottky (MPS) diodes
宋庆文, 张玉明, 张义门, 吕红亮, 陈丰平, 郑庆立
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Analytical model for reverse characteristics of 4H--SiC merged PN--Schottky (MPS) diodes
Song Qing-Wen, Zhang Yu-Ming, Zhang Yi-Men, Lü Hong-Liang, Chen Feng-Ping, Zheng Qing-Li
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

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