中国物理B ›› 2016, Vol. 25 ›› Issue (8): 87307-087307.doi: 10.1088/1674-1056/25/8/087307

• SPECIAL TOPIC—Soft matter and biological physics (Review) • 上一篇    下一篇

AlOx/LiF composite protection layer for Cr-doped (Bi, Sb)2Te3 quantum anomalous Hall films

Yunbo Ou(欧云波), Yang Feng(冯洋), Xiao Feng(冯硝), Zhenqi Hao(郝镇齐), Liguo Zhang(张立果), Chang Liu(刘畅), Yayu Wang(王亚愚), Ke He(何珂), Xucun Ma(马旭村), Qikun Xue(薛其坤)   

  1. 1 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
  • 收稿日期:2016-03-03 修回日期:2016-03-26 出版日期:2016-08-05 发布日期:2016-08-05
  • 通讯作者: Yayu Wang, Ke He E-mail:yayuwang@tsinghua.edu.cn;kehe@tsinghua.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 11325421).

AlOx/LiF composite protection layer for Cr-doped (Bi, Sb)2Te3 quantum anomalous Hall films

Yunbo Ou(欧云波)1, Yang Feng(冯洋)2, Xiao Feng(冯硝)1,2, Zhenqi Hao(郝镇齐)2, Liguo Zhang(张立果)2, Chang Liu(刘畅)2, Yayu Wang(王亚愚)2, Ke He(何珂)2, Xucun Ma(马旭村)2, Qikun Xue(薛其坤)2   

  1. 1 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
  • Received:2016-03-03 Revised:2016-03-26 Online:2016-08-05 Published:2016-08-05
  • Contact: Yayu Wang, Ke He E-mail:yayuwang@tsinghua.edu.cn;kehe@tsinghua.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 11325421).

摘要:

We have realized robust quantum anomalous Hall samples by protecting Cr-doped (Bi, Sb)2Te3 topological insulator films with a combination of LiF and AlOx capping layers. The AlOx/LiF composite capping layer well keeps the quantum anomalous Hall states of Cr-doped (Bi, Sb)2Te3 films and effectively prevent them from degradation induced by ambient conditions. The progress is a key step towards the realization of the quantum phenomena in heterostructures and devices based on quantum anomalous Hall system.

关键词: quantum anomalous Hall effect, AlOx, LiF, protection layer

Abstract:

We have realized robust quantum anomalous Hall samples by protecting Cr-doped (Bi, Sb)2Te3 topological insulator films with a combination of LiF and AlOx capping layers. The AlOx/LiF composite capping layer well keeps the quantum anomalous Hall states of Cr-doped (Bi, Sb)2Te3 films and effectively prevent them from degradation induced by ambient conditions. The progress is a key step towards the realization of the quantum phenomena in heterostructures and devices based on quantum anomalous Hall system.

Key words: quantum anomalous Hall effect, AlOx, LiF, protection layer

中图分类号:  (Electronic transport phenomena in thin films)

  • 73.50.-h
03.65.Vf (Phases: geometric; dynamic or topological)