中国物理B ›› 2018, Vol. 27 ›› Issue (9): 97203-097203.doi: 10.1088/1674-1056/27/9/097203

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode

Yi-Dong Wang(王一栋), Jun Chen(陈俊)   

  1. School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China
  • 收稿日期:2018-04-21 修回日期:2018-06-30 出版日期:2018-09-05 发布日期:2018-09-05
  • 通讯作者: Jun Chen E-mail:junchen@suda.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 61774108) and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China.

Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode

Yi-Dong Wang(王一栋), Jun Chen(陈俊)   

  1. School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China
  • Received:2018-04-21 Revised:2018-06-30 Online:2018-09-05 Published:2018-09-05
  • Contact: Jun Chen E-mail:junchen@suda.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 61774108) and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China.

摘要:

The capacitance-voltage (C-V) characteristic of the TiW/p-InP Schottky barrier diodes (SBDs) is analyzed considering the effects of the interface state (Nss), series resistance (Rs), and deep level defects. The C-V of the Schottky contact is modeled based on the physical mechanism of the interfacial state and series resistance effect. The fitting coefficients α and β are used to reflect the Nss and Rs on the C-V characteristics, respectively. The α decreases with the increase of frequency, while β increases with the increase of frequency. The capacitance increases with the increase of α and the decrease of β. From our model, the peak capacitance and its position can be estimated. The experimental value is found to be larger than the calculated one at the lower voltage. This phenomenon can be explained by the effect of deep level defects.

关键词: Schottky barrier diode, interface state, series resistance

Abstract:

The capacitance-voltage (C-V) characteristic of the TiW/p-InP Schottky barrier diodes (SBDs) is analyzed considering the effects of the interface state (Nss), series resistance (Rs), and deep level defects. The C-V of the Schottky contact is modeled based on the physical mechanism of the interfacial state and series resistance effect. The fitting coefficients α and β are used to reflect the Nss and Rs on the C-V characteristics, respectively. The α decreases with the increase of frequency, while β increases with the increase of frequency. The capacitance increases with the increase of α and the decrease of β. From our model, the peak capacitance and its position can be estimated. The experimental value is found to be larger than the calculated one at the lower voltage. This phenomenon can be explained by the effect of deep level defects.

Key words: Schottky barrier diode, interface state, series resistance

中图分类号:  (III-V and II-VI semiconductors)

  • 72.80.Ey
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.61.Ey (III-V semiconductors) 78.20.Bh (Theory, models, and numerical simulation)