中国物理B ›› 2017, Vol. 26 ›› Issue (9): 94211-094211.doi: 10.1088/1674-1056/26/9/094211

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Optical and defect properties of S-doped and Al-doped GaSe crystals

Chang-Bao Huang(黄昌保), Hai-Xin Wu(吴海信), You-Bao Ni(倪友保), Zhen-You Wang(王振友), Shi-Jing Chen(陈诗静)   

  1. Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China
  • 收稿日期:2016-12-06 修回日期:2017-04-06 出版日期:2017-09-05 发布日期:2017-09-05
  • 通讯作者: Hai-Xin Wu E-mail:hxwu@aiofm.ac.cn
  • 基金资助:
    Project supported by Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. CXJJ-16M128).

Optical and defect properties of S-doped and Al-doped GaSe crystals

Chang-Bao Huang(黄昌保), Hai-Xin Wu(吴海信), You-Bao Ni(倪友保), Zhen-You Wang(王振友), Shi-Jing Chen(陈诗静)   

  1. Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China
  • Received:2016-12-06 Revised:2017-04-06 Online:2017-09-05 Published:2017-09-05
  • Contact: Hai-Xin Wu E-mail:hxwu@aiofm.ac.cn
  • Supported by:
    Project supported by Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. CXJJ-16M128).

RichHTML

0

PDF (PC)

211

赞

摘要： S-doped and Al-doped GaSe crystals are promising materials for their applications in nonlinear frequency conversion devices. The optical and defect properties of pure, S-doped, and Al-doped GaSe crystals were studied by using photoluminescence (PL) and Fourier transform infrared spectroscopy (FT-IR). The micro-topography of (0001) face of these samples was observed by using scanning electron microscope (SEM) to investigate the influence of the doped defects on the intralayer and interlayer chemical bondings. The doped S or Al atoms form the SSe0 or AlGa+1 substitutional defects in the layer GaSe structure, and the positive center of AlGa+1 could induce defect complexes. The incorporations of S and Al atoms can change the optical and mechanical properties of the GaSe crystal by influencing the chemical bonding of the layer structure. The study results may provide guidance for the crystal growth and further applications of S-doped and Al-doped GaSe crystals.

关键词: doped GaSe crystals, defect, optical properties, mechanical properties

Abstract: S-doped and Al-doped GaSe crystals are promising materials for their applications in nonlinear frequency conversion devices. The optical and defect properties of pure, S-doped, and Al-doped GaSe crystals were studied by using photoluminescence (PL) and Fourier transform infrared spectroscopy (FT-IR). The micro-topography of (0001) face of these samples was observed by using scanning electron microscope (SEM) to investigate the influence of the doped defects on the intralayer and interlayer chemical bondings. The doped S or Al atoms form the SSe0 or AlGa+1 substitutional defects in the layer GaSe structure, and the positive center of AlGa+1 could induce defect complexes. The incorporations of S and Al atoms can change the optical and mechanical properties of the GaSe crystal by influencing the chemical bonding of the layer structure. The study results may provide guidance for the crystal growth and further applications of S-doped and Al-doped GaSe crystals.

Key words: doped GaSe crystals, defect, optical properties, mechanical properties

中图分类号:  (Other nonlinear optical materials; photorefractive and semiconductor materials)

  • 42.70.Nq
78.40.Fy (Semiconductors) 78.55.Hx (Other solid inorganic materials) 81.10.Fq (Growth from melts; zone melting and refining)