中国物理B ›› 2017, Vol. 26 ›› Issue (8): 87701-087701.doi: 10.1088/1674-1056/26/8/087701

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Improvement of the high-κ/Ge interface thermal stability using an in-situ ozone treatment characterized by conductive atomic force microscopy

Ji-Bin Fan(樊继斌), Xiao-Jiao Cheng(程晓姣), Hong-Xia Liu(刘红侠), Shu-Long Wang(王树龙), Li Duan(段理)   

  1. 1 School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China;
    2 School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • 收稿日期:2017-03-06 修回日期:2017-04-14 出版日期:2017-08-05 发布日期:2017-08-05
  • 通讯作者: Ji-Bin Fan E-mail:jan@chd.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 61604016), China Postdoctoral Science Foundation (Grant No. 2017M613028), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 310831161003 and CHD2017ZD142).

Improvement of the high-κ/Ge interface thermal stability using an in-situ ozone treatment characterized by conductive atomic force microscopy

Ji-Bin Fan(樊继斌)1, Xiao-Jiao Cheng(程晓姣)1, Hong-Xia Liu(刘红侠)2, Shu-Long Wang(王树龙)2, Li Duan(段理)1   

  1. 1 School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China;
    2 School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2017-03-06 Revised:2017-04-14 Online:2017-08-05 Published:2017-08-05
  • Contact: Ji-Bin Fan E-mail:jan@chd.edu.cn
  • About author:0.1088/1674-1056/26/8/
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 61604016), China Postdoctoral Science Foundation (Grant No. 2017M613028), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 310831161003 and CHD2017ZD142).

摘要:

In this work, an in-situ ozone treatment is carried out to improve the interface thermal stability of HfO2/Al2O3 gate stack on germanium (Ge) substrate. The micrometer scale level of HfO2/Al2O3 gate stack on Ge is studied using conductive atomic force microscopy (AFM) with a conductive tip. The initial results indicate that comparing with a non in-situ ozone treated sample, the interface thermal stability of the sample with an in-situ ozone treatment can be substantially improved after annealing. As a result, void-free surface, low conductive spots, low leakage current density, and relative high breakdown voltage high-κ/Ge are obtained. A detailed analysis is performed to confirm the origins of the changes. All results indicate that in-situ ozone treatment is a promising method to improve the interface properties of Ge-based three-dimensional (3D) devices in future technology nodes.

关键词: high-κ, conductive atomic force microscopy, in-situ ozone, annealing

Abstract:

In this work, an in-situ ozone treatment is carried out to improve the interface thermal stability of HfO2/Al2O3 gate stack on germanium (Ge) substrate. The micrometer scale level of HfO2/Al2O3 gate stack on Ge is studied using conductive atomic force microscopy (AFM) with a conductive tip. The initial results indicate that comparing with a non in-situ ozone treated sample, the interface thermal stability of the sample with an in-situ ozone treatment can be substantially improved after annealing. As a result, void-free surface, low conductive spots, low leakage current density, and relative high breakdown voltage high-κ/Ge are obtained. A detailed analysis is performed to confirm the origins of the changes. All results indicate that in-situ ozone treatment is a promising method to improve the interface properties of Ge-based three-dimensional (3D) devices in future technology nodes.

Key words: high-κ, conductive atomic force microscopy, in-situ ozone, annealing

中图分类号: 

  • 77.55.D-
82.80.Pv (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))