Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow

doi:10.1088/1674-1056/26/8/087307

中国物理B ›› 2017, Vol. 26 ›› Issue (8): 87307-087307.doi: 10.1088/1674-1056/26/8/087307

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow

Bin Li(黎斌), Shan-Jin Huang(黄善津), Hai-Long Wang(王海龙), Hua-Long Wu(吴华龙), Zhi-Sheng Wu(吴志盛), Gang Wang(王钢), Hao Jiang(江灏)

1 State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
2 School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China;
3 The Open University of Guangdong & Guangdong Polytechnic Institute, Guangzhou 510091, China

收稿日期:2017-01-19 修回日期:2017-04-17 出版日期:2017-08-05 发布日期:2017-08-05
通讯作者: Hao Jiang E-mail:stsjiang@mail.sysu.edu.cn
基金资助:
Project supported by the Science and Technology Major Project of Guangdong Province, China (Grant Nos. 2014B010119003 and 2015B010112001).

Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow

Bin Li(黎斌)^2,3, Shan-Jin Huang(黄善津)², Hai-Long Wang(王海龙)², Hua-Long Wu(吴华龙)², Zhi-Sheng Wu(吴志盛)¹, Gang Wang(王钢)¹, Hao Jiang(江灏)¹

1 State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
2 School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China;
3 The Open University of Guangdong & Guangdong Polytechnic Institute, Guangzhou 510091, China

Received:2017-01-19 Revised:2017-04-17 Online:2017-08-05 Published:2017-08-05
Contact: Hao Jiang E-mail:stsjiang@mail.sysu.edu.cn
About author:0.1088/1674-1056/26/8/
Supported by:
Project supported by the Science and Technology Major Project of Guangdong Province, China (Grant Nos. 2014B010119003 and 2015B010112001).

摘要/Abstract

摘要：

The performance of an InGaN/GaN multiple quantum well (MQW) based visible-light Schottky photodiode (PD) is improved by optimizing the source flow of TEGa during InGaN QW growth. The samples with five-pair InGaN/GaN MQWs are grown on sapphire substrates by metal organic chemical vapor deposition. From the fabricated Schottky-barrier PDs, it is found that the smaller the TEGa flow, the lower the reverse-bias leakage is. The photocurrent can also be enhanced by depositing the InGaN QWs with using lower TEGa flow. A high responsivity of 1.94 A/W is obtained at 470 nm and -3-V bias in the PD grown with optimized TEGa flow. Analysis results show that the lower TEGa flow used for depositing InGaN may lead to superior crystalline quality with improved InGaN/GaN interface, and less structural defects related non-radiative recombination centers formed in the MQWs.

关键词: visible-light photodiodes, quantum wells, triethylgallium, oxidized iridium

Abstract:

Key words: visible-light photodiodes, quantum wells, triethylgallium, oxidized iridium

中图分类号: (Photoconduction and photovoltaic effects)

73.50.Pz

73.61.Ey (III-V semiconductors) 78.66.Fd (III-V semiconductors)

黎斌, 黄善津, 王海龙, 吴华龙, 吴志盛, 王钢, 江灏. Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow[J]. 中国物理B, 2017, 26(8): 87307-087307.

Bin Li(黎斌), Shan-Jin Huang(黄善津), Hai-Long Wang(王海龙), Hua-Long Wu(吴华龙), Zhi-Sheng Wu(吴志盛), Gang Wang(王钢), Hao Jiang(江灏). Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow[J]. Chin. Phys. B, 2017, 26(8): 87307-087307.

参考文献 30

[1]	Muñoz E, Monroy E, Pau J L, Calle F, Omnés F and Gibart P 2001 J. Phys.: Condens. Matter 13 7115
[2]	Pantha B N, Wang H, Khan N, Lin J Y and Jiang H X 2011 Phys. Rev. B 84 075327
[3]	Li S X, Yu K M, Wu J, Jones R E, Walukiewicz W, Ager J W, Shan W, Haller E E, Lu H and Schaff W J 2006 Physica B 376-377 432
[4]	Chiou Y Z, Su Y K, Chang S J, Gong J, Lin Y C, Liu S H and Chang C S 2003 IEEE J. Quantum Electron. 39 681
[5]	Rivera C, Pau J L, Naranjo F B and Muñoz E 2004 Phys. Status Solidi A 201 2658
[6]	Rivera C, Pau J L and Muñoz E 2006 Appl. Phys. Lett. 89 263505
[7]	Pereiro J, Rivera C, Navarro A and Munoz E 2009 IEEE J. Quantum Electron. 45 617
[8]	Kim T K, Shim S K, Yang S S, Son J K and Hong Y K 2007 Curr. Appl. Phys. 7 469
[9]	Oliver R A, Kappers M J, Humphreys C J and Briggs G A D 2004 J. Cryst. Growth 272 393
[10]	Piner E L, Behbehani M K, Elmasry N A, Mcintosh F G and Roberts J C 1997 Appl. Phys. Lett. 70 461
[11]	Li B, Zhang L X, Wu Z S, Wang G and Jiang H 2015 IEEE Photon. Technol. Lett. 27 2300
[12]	Smeeton T M, Kappers M J, Barnard J S, Vickers M E and Humphreys C J 2003 Appl. Phys. Lett. 83 5419
[13]	Keller S, Keller B P, Kapolnek D, Abare A C and Masui H 1996 Appl. Phys. Lett. 68 3147
[14]	Song S W, Liu Y, Liang H W, Xia X C and Zhang K X 2013 Chin. J. Lumin. 34 744
[15]	Bayram C and Razeghi M 2009 J. Vac. Sci. Technol. B 27 1784
[16]	Pan Z, Wang Y T, Zhuang Y, Lin Y W and Zhou Z Q 1999 Appl. Phys. Lett. 75 223
[17]	Chichibu S F, Abare A C, Mack M P, Minsky M S and Deguchi T 1999 Mater. Sci. Eng. B 59 298
[18]	Lin Y S, Ma K J, Hsu C, Feng S W and Cheng Y C 2000 Appl. Phys. Lett. 77 2988
[19]	Lai Y L, Liu C P and Chen Z Q 2005 Appl. Phys. Lett. 86 121915
[20]	Watanabe S, Yamada N, Nagashima M, Ueki Y and Sasaki C 2003 Appl. Phys. Lett. 83 4906
[21]	Dai Q, Schubert M F, Kim M H and Kim J K 2009 Conference on Lasers & Electro-optics 94 111109
[22]	Wang Y, Pei X J, Xing Z G, Guo L W and Jia H Q 2007 J. Appl. Phys. 101 033509
[23]	Bimberg D, Sondergeld M and Grobe E 1971 Phys. Rev. B 4 3451
[24]	Meneghini M, Tazzoli A, Butendeich R, Hahn B, Meneghesso G and Zanoni E 2010 IEEE Electron Dev. Lett. 31 579
[25]	Chen D J, Huang Y, Liu B, Xie Z L, Zhang R, Zheng Y D, Wei Y and Narayanamurti V 2009 J. Appl. Phys. 105 063714
[26]	Arslan E, Bütün S and Ozbay E 2009 Appl. Phys. Lett. 94 142106
[27]	Han D P, Oh C H, Kim H, Shim J I, Kim K S and Shin D S 2015 IEEE Trans. Electron Dev. 62 587
[28]	Rivera C, Pau J L, Pereiro J and Muñoz E 2004 Superlattices and Microstructures 36 849
[29]	Jiang H, Nakata N, Zhao G Y, Ishikawa H, Shao C L, Egawa T, Jimbo T and Umeno M 2001 Jpn. J. Appl. Phys. 40 L505
[30]	Klingenstein M, Kuhl J, Rosenzweig J, Moglestue C, Hulsmann A, Schneider J and Kohler K 1994 Solid State Electron. 37 333

Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow

Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 30

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Wen-Jie Wang(王文杰), Ming-Le Liao(廖明乐), Jun Yuan(袁浚), Si-Yuan Luo(罗思源), and Feng Huang(黄锋). Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers[J]. 中国物理B, 2022, 31(7): 74206-074206.
[2]	Zhuang-Zhuang Zhao(赵壮壮), Meng Xun(荀孟), Guan-Zhong Pan(潘冠中), Yun Sun(孙昀), Jing-Tao Zhou(周静涛), and De-Xin Wu(吴德馨). Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers[J]. 中国物理B, 2022, 31(3): 34208-034208.
[3]	Shang-Da Qu(屈尚达), Ming-Sheng Xu(徐明升), Cheng-Xin Wang(王成新), Kai-Ju Shi(时凯居), Rui Li(李睿), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武). Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer[J]. 中国物理B, 2022, 31(1): 17801-017801.
[4]	郑湖颖, 陈智阳, 朱海, 汤梓荧, 王亚琪, 韦海园, 单崇新. Dispersion of exciton-polariton based on ZnO/MgZnO quantum wells at room temperature[J]. 中国物理B, 2020, 29(9): 97302-097302.
[5]	李长富, 时凯居, 徐明升, 徐现刚, 冀子武. Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells[J]. 中国物理B, 2019, 28(10): 107803-107803.
[6]	李阳锋, 江洋, 迭俊珲, 王彩玮, 严珅, 吴海燕, 马紫光, 王禄, 贾海强, 王文新, 陈弘. Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction[J]. 中国物理B, 2018, 27(9): 97104-097104.
[7]	郑卫民, 丛伟艳, 李素梅, 王爱芳, 李斌, 黄海北. Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells[J]. 中国物理B, 2018, 27(1): 17302-017302.
[8]	李阳锋, 江洋, 迭俊珲, 王彩玮, 严珅, 马紫光, 吴海燕, 王禄, 贾海强, 王文新, 陈弘. Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure[J]. 中国物理B, 2017, 26(8): 87311-087311.
[9]	李翔, 赵德刚, 江德生, 杨静, 陈平, 刘宗顺, 朱建军, 刘炜, 何晓光, 李晓静, 梁锋, 刘建平, 张立群, 杨辉, 张源涛, 杜国同, 龙衡, 李沫. Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths[J]. 中国物理B, 2017, 26(1): 17805-017805.
[10]	E Ben Salem, R Chaabani, S Jaziri. Mid/far-infrared photo-detectors based on graphene asymmetric quantum wells[J]. 中国物理B, 2016, 25(9): 98101-098101.
[11]	刘雅丽, 金鹏, 刘贵鹏, 王维颖, 齐志强, 陈长清, 王占国. Exciton-phonon interaction in Al_0.4Ga_0.6N/Al_0.53Ga_0.47N multiple quantum wells[J]. 中国物理B, 2016, 25(8): 87801-087801.
[12]	郑卫民, 李素梅, 丛伟艳, 王爱芳, 李斌, 黄海北. Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well[J]. 中国物理B, 2016, 25(4): 47302-047302.
[13]	吴海燕, 马紫光, 江洋, 王禄, 杨浩军, 李阳锋, 左朋, 贾海强, 王文新, 周钧铭, 刘伍明, 陈弘. Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction[J]. 中国物理B, 2016, 25(11): 117803-117803.
[14]	Hamedi H R, Mehmannavaz M R, Afshari Hadi. Control over hysteresis curves and thresholds of optical bistability in different semiconductor double quantum wells[J]. 中国物理B, 2015, 24(8): 84211-084211.
[15]	王强, 冀子武, 王帆, 牟奇, 郑雨军, 徐现刚, 吕元杰, 冯志红. Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells[J]. , 2015, 24(2): 24219-024219.