Proton radiation effect on GaAs/AlGaAs core-shell ensemble nanowires photo-detector

doi:10.1088/1674-1056/26/8/086202

中国物理B ›› 2017, Vol. 26 ›› Issue (8): 86202-086202.doi: 10.1088/1674-1056/26/8/086202

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Proton radiation effect on GaAs/AlGaAs core-shell ensemble nanowires photo-detector

Li-Ying Tan(谭丽英), Fa-Jun Li(黎发军), Xiao-Long Xie(谢小龙), Yan-Ping Zhou(周彦平), Jing Ma(马晶)

National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China

收稿日期:2017-03-22 修回日期:2017-04-16 出版日期:2017-08-05 发布日期:2017-08-05
通讯作者: Fa-Jun Li E-mail:lifajun1201@gmail.com

Proton radiation effect on GaAs/AlGaAs core-shell ensemble nanowires photo-detector

Li-Ying Tan(谭丽英), Fa-Jun Li(黎发军), Xiao-Long Xie(谢小龙), Yan-Ping Zhou(周彦平), Jing Ma(马晶)

National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China

Received:2017-03-22 Revised:2017-04-16 Online:2017-08-05 Published:2017-08-05
Contact: Fa-Jun Li E-mail:lifajun1201@gmail.com
About author:0.1088/1674-1056/26/8/

摘要/Abstract

摘要：

We demonstrate that the GaAs/AlGaAs nanowires (NWs) ensemble is fabricated into photo-detectors. Current-voltage (I-V) characteristics are measured on GaAs/AlGaAs core-shell ensemble NW photo-detectors at room-temperature before and after 1-MeV proton irradiation with fluences from 1.0×10¹³ cm^-2 to 5.0×10¹⁴ cm^-2. The degradation of photocurrent suggests that the point defects induced by proton radiation could cause both carrier lifetime and carrier mobility to decrease synchronously. Comparing with a GaAs quantum well, the degradations of light and dark current for the irradiated NWs photo-detector indicate that NWs material is a preferable potential candidate for space applications.

关键词: radiation effect, lifetime damage coefficient, mobility damage coefficient, radiation damage

Abstract:

Key words: radiation effect, lifetime damage coefficient, mobility damage coefficient, radiation damage

中图分类号: (Nanowires)

62.23.Hj

61.72.-y (Defects and impurities in crystals; microstructure) 61.80.-x (Physical radiation effects, radiation damage) 61.80.Jh (Ion radiation effects)

谭丽英, 黎发军, 谢小龙, 周彦平, 马晶. Proton radiation effect on GaAs/AlGaAs core-shell ensemble nanowires photo-detector[J]. 中国物理B, 2017, 26(8): 86202-086202.

Li-Ying Tan(谭丽英), Fa-Jun Li(黎发军), Xiao-Long Xie(谢小龙), Yan-Ping Zhou(周彦平), Jing Ma(马晶). Proton radiation effect on GaAs/AlGaAs core-shell ensemble nanowires photo-detector[J]. Chin. Phys. B, 2017, 26(8): 86202-086202.

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Proton radiation effect on GaAs/AlGaAs core-shell ensemble nanowires photo-detector

Proton radiation effect on GaAs/AlGaAs core-shell ensemble nanowires photo-detector

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