中国物理B ›› 2017, Vol. 26 ›› Issue (4): 48802-048802.doi: 10.1088/1674-1056/26/4/048802

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    

A simulation study on p-doping level of polymer host material in P3HT: PCBM bulk heterojunction solar cells

Hossein Movla, Mohammad Babazadeh   

  1. Azar Aytash Co., Technology Incubator, University of Tabriz, Tabriz, Iran
  • 收稿日期:2016-02-01 修回日期:2016-11-26 出版日期:2017-04-05 发布日期:2017-04-05
  • 通讯作者: Hossein Movla E-mail:h.movla@azaraytash.com

A simulation study on p-doping level of polymer host material in P3HT: PCBM bulk heterojunction solar cells

Hossein Movla, Mohammad Babazadeh   

  1. Azar Aytash Co., Technology Incubator, University of Tabriz, Tabriz, Iran
  • Received:2016-02-01 Revised:2016-11-26 Online:2017-04-05 Published:2017-04-05
  • Contact: Hossein Movla E-mail:h.movla@azaraytash.com

摘要: In this study, we investigate the influence of doping on the charge transfer and device characteristics parameters in the bulk heterojunction solar cells based on poly(3-hexylthiophene) (P3HT) and a methanofullerene derivative (PCBM). Organic semiconductors are also known to be not pure and they have defects and impurities, some of them are being charged and act as p-type or n-type dopants. Calculations of the solar cell characteristics parameters versus the p-doping level have been done at three different n-dopings (Nd) that consist of 5×1017 cm-3, 1018 cm-3, and 5×1018 cm-3. We perform the analysis of the doping concentration through the drift-diffusion model, and calculate the current and voltage doping dependency. We find that at three different n-dopant levels, optimum p-type doping is about Np=6×1018 cm-3. Simulation results have shown that by increasing doping level, Voc monotonically increases by doping. Cell efficiency reaches its maximum at somewhat higher doping as FF has its peak at Np=3×1018 cm-3. Moreover, this paper demonstrates that the optimum value for the p-doping is about Np=6×1018 cm-3 and optimum value for n-dopant is Nd=1018 cm-3, respectively. The simulated results confirm that doping considerably affects the performance of organic solar cells.

关键词: organic photovoltaics, charge transport, doping, finite difference method

Abstract: In this study, we investigate the influence of doping on the charge transfer and device characteristics parameters in the bulk heterojunction solar cells based on poly(3-hexylthiophene) (P3HT) and a methanofullerene derivative (PCBM). Organic semiconductors are also known to be not pure and they have defects and impurities, some of them are being charged and act as p-type or n-type dopants. Calculations of the solar cell characteristics parameters versus the p-doping level have been done at three different n-dopings (Nd) that consist of 5×1017 cm-3, 1018 cm-3, and 5×1018 cm-3. We perform the analysis of the doping concentration through the drift-diffusion model, and calculate the current and voltage doping dependency. We find that at three different n-dopant levels, optimum p-type doping is about Np=6×1018 cm-3. Simulation results have shown that by increasing doping level, Voc monotonically increases by doping. Cell efficiency reaches its maximum at somewhat higher doping as FF has its peak at Np=3×1018 cm-3. Moreover, this paper demonstrates that the optimum value for the p-doping is about Np=6×1018 cm-3 and optimum value for n-dopant is Nd=1018 cm-3, respectively. The simulated results confirm that doping considerably affects the performance of organic solar cells.

Key words: organic photovoltaics, charge transport, doping, finite difference method

中图分类号:  (Organic photovoltaics)

  • 88.40.jr
91.60.Tn (Transport properties) 61.72.-y (Defects and impurities in crystals; microstructure) 02.70.Bf (Finite-difference methods)