Topological transport in Dirac electronic systems: A concise review

doi:10.1088/1674-1056/26/3/037301

中国物理B ›› 2017, Vol. 26 ›› Issue (3): 37301-037301.doi: 10.1088/1674-1056/26/3/037301

所属专题： TOPICAL REVIEW — 2D materials: physics and device applications

• TOPICAL REVIEW—2D materials: physics and device applications • 上一篇下一篇

Topological transport in Dirac electronic systems: A concise review

Hua-Ding Song(宋化鼎), Dian Sheng(盛典), An-Qi Wang(王安琦), Jin-Guang Li(李金光), Da-Peng Yu(俞大鹏), Zhi-Min Liao(廖志敏)

1 State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
2 Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China;
3 Collaborative Innovation Center of Quantum Matter, Beijing 100871, China;
4 Department of Physics, South University of Science and Technology of China, Shenzhen 518055, China

收稿日期:2016-09-03 修回日期:2016-11-23 出版日期:2017-03-05 发布日期:2017-03-05
通讯作者: Zhi-Min Liao E-mail:liaozm@pku.edu.cn
基金资助:
Project supported by the Ministry of Science and Technology of China (Grant Nos. 2016YFA0300802 and 2013CB934600) and the National Natural Science Foundation of China (Grant Nos. 11274014 and 11234001).

Topological transport in Dirac electronic systems: A concise review

Hua-Ding Song(宋化鼎)¹, Dian Sheng(盛典)¹, An-Qi Wang(王安琦)², Jin-Guang Li(李金光)¹, Da-Peng Yu(俞大鹏)^1,3,4, Zhi-Min Liao(廖志敏)^1,3

1 State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
2 Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China;
3 Collaborative Innovation Center of Quantum Matter, Beijing 100871, China;
4 Department of Physics, South University of Science and Technology of China, Shenzhen 518055, China

Received:2016-09-03 Revised:2016-11-23 Online:2017-03-05 Published:2017-03-05
Contact: Zhi-Min Liao E-mail:liaozm@pku.edu.cn
Supported by:
Project supported by the Ministry of Science and Technology of China (Grant Nos. 2016YFA0300802 and 2013CB934600) and the National Natural Science Foundation of China (Grant Nos. 11274014 and 11234001).

摘要/Abstract

摘要：

Various novel physical properties have emerged in Dirac electronic systems, especially the topological characters protected by symmetry. Current studies on these systems have been greatly promoted by the intuitive concepts of Berry phase and Berry curvature, which provide precise definitions of the topological phases. In this topical review, transport properties of topological insulator (Bi₂Se₃), topological Dirac semimetal (Cd₃As₂), and topological insulator-graphene heterojunction are presented and discussed. Perspectives about transport properties of two-dimensional topological nontrivial systems, including topological edge transport, topological valley transport, and topological Weyl semimetals, are provided.

关键词: transport property, topological insulator, topological semimetal, graphene heterostructure

Abstract:

Key words: transport property, topological insulator, topological semimetal, graphene heterostructure

中图分类号: (Electronic transport phenomena in thin films)

73.50.-h

73.20.Fz (Weak or Anderson localization) 71.27.+a (Strongly correlated electron systems; heavy fermions) 79.60.Jv (Interfaces; heterostructures; nanostructures)

宋化鼎, 盛典, 王安琦, 李金光, 俞大鹏, 廖志敏. Topological transport in Dirac electronic systems: A concise review[J]. 中国物理B, 2017, 26(3): 37301-037301.

Hua-Ding Song(宋化鼎), Dian Sheng(盛典), An-Qi Wang(王安琦), Jin-Guang Li(李金光), Da-Peng Yu(俞大鹏), Zhi-Min Liao(廖志敏). Topological transport in Dirac electronic systems: A concise review[J]. Chin. Phys. B, 2017, 26(3): 37301-037301.

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Topological transport in Dirac electronic systems: A concise review

Topological transport in Dirac electronic systems: A concise review

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