中国物理B ›› 2017, Vol. 26 ›› Issue (3): 34208-034208.doi: 10.1088/1674-1056/26/3/034208

所属专题: TOPICAL REVIEW — 2D materials: physics and device applications

• TOPICAL REVIEW—2D materials: physics and device applications • 上一篇    下一篇

Band gap engineering of atomically thin two-dimensional semiconductors

Cui-Huan Ge(葛翠环), Hong-Lai Li(李洪来), Xiao-Li Zhu(朱小莉), An-Lian Pan(潘安练)   

  1. Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha 410082, China
  • 收稿日期:2016-12-16 修回日期:2017-01-31 出版日期:2017-03-05 发布日期:2017-03-05
  • 通讯作者: An-Lian Pan, Xiao-Li Zhu E-mail:anlian.pan@hnu.edu.cn;zhuxiaoli@hnu.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11374092, 61474040, 61574054, and 61505051), the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China, and the Science and Technology Department of Hunan Province, China (Grant No. 2014FJ2001).

Band gap engineering of atomically thin two-dimensional semiconductors

Cui-Huan Ge(葛翠环), Hong-Lai Li(李洪来), Xiao-Li Zhu(朱小莉), An-Lian Pan(潘安练)   

  1. Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha 410082, China
  • Received:2016-12-16 Revised:2017-01-31 Online:2017-03-05 Published:2017-03-05
  • Contact: An-Lian Pan, Xiao-Li Zhu E-mail:anlian.pan@hnu.edu.cn;zhuxiaoli@hnu.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11374092, 61474040, 61574054, and 61505051), the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China, and the Science and Technology Department of Hunan Province, China (Grant No. 2014FJ2001).

摘要:

Atomically thin two-dimensional (2D) layered materials have potential applications in nanoelectronics, nanophotonics, and integrated optoelectronics. Band gap engineering of these 2D semiconductors is critical for their broad applications in high-performance integrated devices, such as broad-band photodetectors, multi-color light emitting diodes (LEDs), and high-efficiency photovoltaic devices. In this review, we will summarize the recent progress on the controlled growth of composition modulated atomically thin 2D semiconductor alloys with band gaps tuned in a wide range, as well as their induced applications in broadly tunable optoelectronic components. The band gap engineered 2D semiconductors could open up an exciting opportunity for probing their fundamental physical properties in 2D systems and may find diverse applications in functional electronic/optoelectronic devices.

关键词: 2D semiconductors, band gap engineering, alloys, atomically thin

Abstract:

Atomically thin two-dimensional (2D) layered materials have potential applications in nanoelectronics, nanophotonics, and integrated optoelectronics. Band gap engineering of these 2D semiconductors is critical for their broad applications in high-performance integrated devices, such as broad-band photodetectors, multi-color light emitting diodes (LEDs), and high-efficiency photovoltaic devices. In this review, we will summarize the recent progress on the controlled growth of composition modulated atomically thin 2D semiconductor alloys with band gaps tuned in a wide range, as well as their induced applications in broadly tunable optoelectronic components. The band gap engineered 2D semiconductors could open up an exciting opportunity for probing their fundamental physical properties in 2D systems and may find diverse applications in functional electronic/optoelectronic devices.

Key words: 2D semiconductors, band gap engineering, alloys, atomically thin

中图分类号:  (Photonic bandgap materials)

  • 42.70.Qs
71.20.Be (Transition metals and alloys) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 52.70.Kz (Optical (ultraviolet, visible, infrared) measurements)