The residual C concentration control for low temperature growth p-type GaN

doi:10.1088/1674-1056/26/10/107102

中国物理B ›› 2017, Vol. 26 ›› Issue (10): 107102-107102.doi: 10.1088/1674-1056/26/10/107102

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

The residual C concentration control for low temperature growth p-type GaN

1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

收稿日期:2017-06-05 修回日期:2017-07-04 出版日期:2017-10-05 发布日期:2017-10-05
通讯作者: De-Gang Zhao, Jing Yang E-mail:dgzhao@red.semi.ac.cn;yangjing333@semi.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0401801 and 2016YFB0400803), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), the Science Challenge Project (Grant No. JCKY2016212A503), and Beijing Municipal Science and Technology Project (Grant No. Z161100002116037).

The residual C concentration control for low temperature growth p-type GaN

Shuang-Tao Liu(刘双韬)¹, De-Gang Zhao(赵德刚)^1,2, Jing Yang(杨静)¹, De-Sheng Jiang(江德生)¹, Feng Liang(梁锋)¹, Ping Chen(陈平)¹, Jian-Jun Zhu(朱建军)¹, Zong-Shun Liu(刘宗顺)¹, Xiang Li(李翔)¹, Wei Liu(刘炜)¹, Yao Xing(邢瑶)¹, Li-Qun Zhang(张立群)³

1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

Received:2017-06-05 Revised:2017-07-04 Online:2017-10-05 Published:2017-10-05
Contact: De-Gang Zhao, Jing Yang E-mail:dgzhao@red.semi.ac.cn;yangjing333@semi.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0401801 and 2016YFB0400803), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), the Science Challenge Project (Grant No. JCKY2016212A503), and Beijing Municipal Science and Technology Project (Grant No. Z161100002116037).

摘要/Abstract

摘要：

In this work, the influence of C concentration to the performance of low temperature growth p-GaN is studied. Through analyses, we have confirmed that the C impurity has a compensation effect to p-GaN. At the same time we have found that several growth and annealing parameters have influences on the residual C concentration:(i) the C concentration decreases with the increase of growth pressure; (ii) we have found there exists a Ga memory effect when changing the Cp₂Mg flow which will lead the growth rate and C concentration increase along the increase of Cp₂Mg flow; (iii) annealing outside of metal-organic chemical vapor deposition (MOCVD) could decrease the C concentration while in situ annealing in MOCVD has an immobilization role to C concentration.

关键词: nitride materials, p-GaN, C concentration

Abstract:

Key words: nitride materials, p-GaN, C concentration

中图分类号: (Semiconductor compounds)

71.20.Nr

71.55.Eq (III-V semiconductors) 78.55.Cr (III-V semiconductors)

刘双韬, 赵德刚, 杨静, 江德生, 梁锋, 陈平, 朱建军, 刘宗顺, 李翔, 刘炜, 邢瑶, 张立群. The residual C concentration control for low temperature growth p-type GaN[J]. 中国物理B, 2017, 26(10): 107102-107102.

Shuang-Tao Liu(刘双韬), De-Gang Zhao(赵德刚), Jing Yang(杨静), De-Sheng Jiang(江德生), Feng Liang(梁锋), Ping Chen(陈平), Jian-Jun Zhu(朱建军), Zong-Shun Liu(刘宗顺), Xiang Li(李翔), Wei Liu(刘炜), Yao Xing(邢瑶), Li-Qun Zhang(张立群). The residual C concentration control for low temperature growth p-type GaN[J]. Chin. Phys. B, 2017, 26(10): 107102-107102.

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The residual C concentration control for low temperature growth p-type GaN

The residual C concentration control for low temperature growth p-type GaN

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